Highly Sensitive Detection of Dna with Hna Defined Silicon Nanowire Fet

We herein developed a simple method to process a silicon nanowire field-effect transistor (SiNW-FET) sensor by using HNA to define the nanowire and top-down fabrication method. Problems caused by the dry and TMAH etchings were effectively avoided, and the surface to volume ratio of the nanowire was increased by the HNA etching at the same time. After SiNWs were covalently modified with DNA probes, the detections on target Norovirus DNA were successfully realized with the concentration as low as 1fM and the respond time of a few seconds. The mismatch discrimination ability for single nucleotide polymorphism (SNP) detection was also experimentally certified. This work provides an efficient way for the DNA detection with mass manufacturing ability and potential compatibility with the conventional silicon industry, which definitely facilitate the practical applications.